APTGF660U60D4 APTGF660U60D4 ? rev 0 january, 2005 apt website ? http:/ / www.advancedpower.com 1 - 3 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 825 i c continuous collector current t c = 80c 660 i cm pulsed collector current t c = 25c 1100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 2770 w rbsoa reverse bias safe operation area t j = 125c 1100a@520v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. 3 5 2 1 5 3 4 1 2 v ces = 600v i c = 660a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching freque nc y up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? low stray inductance - m6 connectors for power - m4 connectors for signal ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat single switch n p t igbt power module
APTGF660U60D4 APTGF660U60D4 ? rev 0 january, 2005 apt website ? http:/ / www.advancedpower.com 2 - 3 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 1 500 a i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 1 ma t j = 25c 1.95 2.45 v ce(on) collector emitter on voltage v ge = 15v i c = 660a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 6ma 4.5 5.5 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 36 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 3.2 nf t d(on) tur n-o n delay ti me 210 t r rise time 86 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 800a r g = 4.7 ? 83 ns t d(on) tur n-o n delay ti me 250 t r rise time 93 t d(off) turn-off delay time 450 t f fall time 95 ns e on turn on energy 18 e off turn off energy inductive switching (125c) v ge = 15v v bus = 300v i c = 800a r g = 4.7 ? 25 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit t j = 25c 1.25 1.6 v f diode forward voltage i f = 800a v ge = 0v t j = 125c 1.2 v t j = 25c 52 q rr reverse recovery charge i f = 800a v r = 300v di/dt =4000a/s t j = 125c 87 c thermal and package characteristics symbol characteristic min typ max unit igbt 0.045 r thjc junction to case diode 0.085 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c m6 3 5 torque mounting torque m4 1 2 n.m wt package weight 420 g
APTGF660U60D4 APTGF660U60D4 ? rev 0 january, 2005 apt website ? http:/ / www.advancedpower.com 3 - 3 package outline apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
|
